A 2-watt X-band silicon power transistor

1 June 1978

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 25 (6) , 731-736
https://doi.org/10.1109/t-ed.1978.19161

Abstract

A silicon power transistor for use atX-band has been developed utilizing e-beam lithography and ion implantation. The transistor has a bar size of 0.5 × 1 mm²and consists of four 27.5 × 75-µm²active cells. With a specially designed package, the combined output power of four cells operating at common base ClassCmode is nearly 2 W CW at 8 GHz and almost 1.5 W CW at 10 GHz.

Keywords

TRANSISTOR
BAR
LITHOGRAPHY
IMPLANTATION
PACKAGE
OUTPUT
GHZ
SILICON POWER

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