A tight binding study of the electronic structure of MnTe
- 10 January 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (1) , 59-68
- https://doi.org/10.1088/0022-3719/20/1/010
Abstract
A tight-binding version of the itinerant spin-fluctuation theory is used to describe the electronic structure of MnTe in both magnetically ordered and disordered phases. The static model of disordered local moments is shown to be sufficiently accurate to form the basis for a quantitative description of semiconducting behaviour of paramagnetic MnTe. A new type of disorder-induced metal-insulator transition is found.Keywords
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