Abstract
The characteristic fluorescence correction has been taken into account in the authors Monte Carlo program for the case of a film fluorescing under X-ray emission from the substrate. The effect is evaluated for Al on Si, at electron energies of 10, 20 and 30 keV and thicknesses ranging up to 0.6 mg cm-2. In the particular limit of zero thickness the correction is in agreement with the analytical model by Cox et al. (1979).

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