Hysteresis and gold in metal-insulator-semiconductor (MIS) capacitors†

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Abstract
Measurements on gold diffused MIS capacitors, using different dielectric materials, have shown that in addition to changing the surface charge densities present at the silicon-dielectric interface, the gold also reduces the voltage hysteresis commonly observed in the capacitor C-V curves. Some orientation dependent hysteresis results, taken with these gold results, would indicate that the centres responsible for the hysteresis are slow traps located at the silicon—dielectric interface, and that interaction of these states with gold makes them electrically inactive.

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