Irradiation-induced segregation and diffusion of manganese implants in nickel
- 1 January 1981
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 58 (3-4) , 83-89
- https://doi.org/10.1080/01422448108228600
Abstract
The effects of radiation-induced solute redistribution and diffusion are studied for 30 keV Mn implants in nickel irradiated with 75 keV Ni+ ions at 500°C. The peak of the Mn implant profile is driven to greater depth with increasing irradiation dose until a steady-state solute profile is established. The rate of drift of Mn atoms and their diffusion coefficient is related to the distribution of point-defects in the nickel under irradiation.Keywords
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