Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAs

25 October 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (22) , 944-945
https://doi.org/10.1049/el:19840642

Abstract

A rapid infra-red (IR) lamp system used to alloy Au-Ge ohmic contacts to n-GaAs has yielded specific contact resistivity a factor of 3 lower than achieved by conventional graphite strip heater. In this initial study temperatures between 430 and 445°C and alloying times of 1 to 5 s have produced the best results.

Keywords

430°C TO 445°C
CONTACT RESISTIVITY
IR LAMP
N-GAAS
AU-GE
ALLOYING TIMES
OHMIC CONTACTS
METALLISATION

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