InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm
- 14 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (7) , 833-835
- https://doi.org/10.1063/1.111029
Abstract
Double‐heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.Keywords
This publication has 19 references indexed in Scilit:
- HgCdTe infrared diode lasers grown by MBESemiconductor Science and Technology, 1993
- Improving InAs double heterostructure lasers with better confinementIEEE Journal of Quantum Electronics, 1992
- High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu mIEEE Journal of Quantum Electronics, 1991
- Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μmElectronics Letters, 1989
- New III-V double-heterojunction laser emitting near 3.2μmElectronics Letters, 1988
- Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μmSoviet Journal of Quantum Electronics, 1988
- InAsPSb/InAs diode laser emitting in the 2.5μm rangeElectronics Letters, 1988
- Light emission from HgCdTe diodesJournal of Vacuum Science & Technology A, 1988
- HgMnTe light emitting diodes and laser heterostructuresJournal of Vacuum Science & Technology A, 1988
- Lead salt quantum well diode lasersSuperlattices and Microstructures, 1985