Millimeter-wave three-dimensional masterslice MMICS
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 239-242
- https://doi.org/10.1109/rfic.1998.682089
Abstract
The three-dimensional (3D) masterslice MMIC technology has, even in the millimeter-wave region, the advantages of high integration levels, simple design procedures, short turn-around-time, and low fabrication cost. Fabricated V-band amplifiers achieve an 8-dB gain and a 5.3 dB noise figure in an area of 0.27 mm/sup 2/. A U-band single-chip downconverter is also demonstrated.Keywords
This publication has 7 references indexed in Scilit:
- Three-dimensional MMIC technology for multifunction integration and its possible application to masterslice MMICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 60 GHz GaAs MMIC technology for a high data rate mobile broadband demonstratorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A double lightly doped drain (D-LDD) structure H-MESFET for MMIC applicationsIEEE Transactions on Microwave Theory and Techniques, 1997
- Highly integrated three-dimensional MMIC technology applied to novel masterslice GaAs- and Si-MMICsIEEE Journal of Solid-State Circuits, 1997
- Sixty-GHz-band ultra-miniature monolithic T/R modules for multimedia wireless communication systemsIEEE Transactions on Microwave Theory and Techniques, 1996
- Three-dimensional passive circuit technology for ultra-compact MMICsIEEE Transactions on Microwave Theory and Techniques, 1995