A low-noise microwave HEMT using MOCVD
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (5) , 595-600
- https://doi.org/10.1109/T-ED.1986.22538
Abstract
Low-noise high-electron-mobility Transistors (HEMT's) with AlGaAs/GaAs heterostructures have been successfully fabricated using normal pressure metal-organic chemical vapor deposition (MOCVD). Hall mobilities of the two-dimensional electron gas at the interface are 8030 and 14 8000 cm 2 /V . s at 300 and 77 K, respectively, with an undoped Al 0.3 Ga 0.7 As spacer layer of 100 Å. The HEMT's with 0.65-µm-long and 200-µm-wide gates have exhibited a noise figure of 1.13 dB with 10.8 dB of associated gain at 12 GHz, and a dc transconductance of 280 mS/mm. These values are comparable to other reported HEMT devices using molecular-beam epitaxy (MBE).Keywords
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