Profiling of deep impurities by persistent photocurrent measurements
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 628-629
- https://doi.org/10.1063/1.93630
Abstract
A method to obtain the volume density Z of deep impurities in semiconductors versus their spatial depth is described. Z is derived by measuring the increase of the photoinduced persistent sheet density of carriers Δ(nd) in a conductive layer as a function of incident photon dose Q. The slope of the Δ(nd) = f(log Q) curve depends upon the concentration profile of the deep traps in the substrate beneath the conductive layer, as is demonstrated by experiments using GaAs.Keywords
This publication has 4 references indexed in Scilit:
- Illumination-dose dependence of persistent photoconductivity ofn-GaAs epitaxial layersApplied Physics A, 1980
- Hall-Effect Analysis of Persistent Photocurrents in-GaAs LayersPhysical Review Letters, 1979
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974