Acoustoelectric effect in systems with localized states
- 15 September 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (11) , 5497-5505
- https://doi.org/10.1103/physrevb.44.5497
Abstract
The response of the charge carriers of a semiconductor to a traveling acoustic wave is discussed. As is well known, such a wave drags free carriers and, as a result, a dc voltage across the sample appears (the acoustoelectric effect). We show that the same phenomenon exists for hopping transport of localized electrons. There are two hopping contributions to the voltage. One is due to a drag of charged carriers by the acoustic wave along infinite percolation paths. The incubation time for this contribution is the Maxwellian relaxation time, which depends on the conductivity. The other is due to a polarization of finite conducting clusters by the acoustic wave. This polarization induces a voltage pulse when the acoustic wave is switched on, and the characteristic decay time is again of the order of the Maxwellian time. The information one can obtain from the two hopping contributions in acoustic experiments is discussed.Keywords
This publication has 8 references indexed in Scilit:
- Description of open cosmological models with matter by harmonic functionsRussian Physics Journal, 1990
- Electronic transport and recombination in amorphous semiconductors at low temperaturesPhysical Review Letters, 1989
- Equilibrium transport in amorphous semiconductorsJournal of Non-Crystalline Solids, 1985
- Hopping in Exponential Band TailsPhysical Review Letters, 1985
- Analysis of the traveling-wave technique for measuring mobilities in low-conductivity semiconductorsPhysical Review B, 1984
- A hopping model for activated charge transport in amorphous siliconPhysica Status Solidi (b), 1979
- Nonlinear effects in the propagation of high-frequency sound in normal conductorsSoviet Physics Uspekhi, 1979
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961