Barrier at the interface between amorphous silicon and transparent conducting oxides and its influence on solar cell performance
- 1 May 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5) , 2757-2760
- https://doi.org/10.1063/1.332303
Abstract
We have found that a heterostructure made of a conductive transparent oxide (SnO2, ITO, or Pt:SiO2) and p-type or n-type or intrinsic a-Si:H shows a substantial potential barrier at the interface. This barrier is important in order to explain the behavior of Voc versus doping of the p layer in p-i-n solar cells. The barrier should also be taken into account in order to explain the poor blue response of solar cells.This publication has 4 references indexed in Scilit:
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