Dependence of ionization coefficients on well and barrier widths for GaAs/AlGaAs multiple quantum wells
- 31 October 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (10) , 1235-1245
- https://doi.org/10.1016/0038-1101(90)90026-b
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Dependence of the GaAs/AlGaAs superlattice ionization rate on Al contentApplied Physics Letters, 1989
- Impact ionization in AlxGa1−xAs for x=0.1–0.4Applied Physics Letters, 1988
- The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurementsIEEE Transactions on Electron Devices, 1985
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- Electroabsorption produced mixed injection and its effect on the determination of ionization coefficientsSolid-State Electronics, 1982
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Ionization coefficients measured in abrupt InP junctionsApplied Physics Letters, 1980
- Some optical properties of the AlxGa1−xAs alloys systemJournal of Applied Physics, 1976
- Use of a Schottky barrier to measure impact ionization coefficients in semiconductorsSolid-State Electronics, 1973
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966