Enhanced hot-electron photoluminescence from heavily carbon-doped GaAs
- 19 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1154-1156
- https://doi.org/10.1063/1.102548
Abstract
An enhancement of hot‐electron photoluminescence due to degenerate conditions in the valence band has been observed in metalorganic molecular beam epitaxial grown GaAs:C with net acceptor concentration of up to 4×1020 cm−3. The photoluminescence (PL) was studied as a function of free‐carrier concentration and sample temperature. Comparison of the PL spectra from the heavily doped GaAs to that of undoped material shows a peak shift to lower energy coupled with a greatly enhanced high‐energy tail extending into the visible region of the spectrum. At 300 K, luminescence at 1.8 eV is observed at 20% the intensity of the peak luminescence at 1.36 eV.Keywords
This publication has 14 references indexed in Scilit:
- Quantitative analysis of carbon concentration in MOMBE p-GaAs by low-temperature photoluminescenceJournal of Applied Physics, 1988
- Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1988
- Models for heavy doping effects in gallium arsenideJournal of Applied Physics, 1987
- High dopant and carrier concentration effects in gallium arsenide: Band structure and effective intrinsic carrier concentrationsJournal of Applied Physics, 1986
- Band gap narrowing due to many-body effects in silicon and gallium arsenideJournal of Physics C: Solid State Physics, 1984
- Hot electron photoluminescence in GaAs crystalsSolid State Communications, 1981
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954