LO phonons in GaAs/Ga1-xAlxAs superlattices and their Raman spectra
- 10 June 1986
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 19 (16) , L339-L344
- https://doi.org/10.1088/0022-3719/19/16/001
Abstract
A theory of Raman scattering by superlattice LO phonons is outlined. The formalism is based on the dispersive continuum model obtained by the extension of the Born and Huang theory (1968) to include dispersion. This model allows a straightforward derivation of the response functions entering the light scattering cross section. Although the theory can be formulated so as to apply to any scattering geometry, only the familiar back-scattering configuration is considered here. The predictions of the theory are examined for this case and compared with the corresponding experimental data from a GaAs/Ga1-xAlxAs superlattice.Keywords
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