Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs
- 1 June 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (2) , 327-332
- https://doi.org/10.1016/0022-0248(89)90529-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The Effect of Long-term Annealing on the Electrical Properties of SI-GaAsJapanese Journal of Applied Physics, 1988
- Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomographyJournal of Applied Physics, 1987
- Inverted thermal conversion—GaAs, a new alternative material for integrated circuitsApplied Physics Letters, 1986
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980