Resonant Raman study of the LO-phonon energy fluctuation in III-V alloy semiconductors
- 15 April 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (11) , 6393-6396
- https://doi.org/10.1103/physrevb.37.6393
Abstract
The resonant Raman scattering technique has been used to monitor the concentration fluctuations of the atoms in III-V mixed crystals. A shift of the LO phonons in the forbidden configuration with respect to the LO modes in the allowed one has been observed. Its dependence on the laser energy has been studied. It has been attributed to the alloy nature of the mixed crystals by considering the compositional fluctuation within the effective range of the electron-phonon interaction volume.Keywords
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