Performance of the focused-ion-striped transistor (FIST)—A new MESFET structure produced by focused-ion-beam implantation
- 1 November 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (11) , 2232-2237
- https://doi.org/10.1109/T-ED.1987.23225
Abstract
We report the fabrication and performance of the focused-ion-striped transistor (FIST), which is a GaAs MESFET structure having a channel with stripes of high conductance, going from the source to the drain, separated by regions of semi-insulating material. Calculations show that this structure produces a depletion layer that wraps around the conducting channel stripes and this should result in improved transconductance and output resistance. Experimental results are reported for devices having 1-µm gates and the FIST channels produced by focused-ion-beam implants of silicon with a width of 0.2 µm and a spacing that is varied from 0.2 to 0.5 µm. These verify the basic performance characteristics of the FIST including an increase in stripe transconductance, a two-fold increase in output resistance, and larger values of fTfor small values of Idsnear pinchoff.Keywords
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