Structural and ferroelectric properties of the c-axis oriented SrBi2Ta2O9 thin films deposited by the radio-frequency magnetron sputtering
- 16 December 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (25) , 3839-3841
- https://doi.org/10.1063/1.117122
Abstract
Radio‐frequency magnetron sputtering was used to deposit SrBi2Ta2O9 ferroelectric thin films on Pt(111)/Ti/SiO2/Si(001) substrates. Thin films were deposited at room temperature with argon pressures of 0.5–100 mTorr and with sputtering power of 2.5 W/cm2. The crystal orientations of thin films were strongly affected by the argon pressures, the c‐axis oriented SrBi2Ta2O9 thin film was obtained with argon pressure of 30 mTorr. The crystal structures of the c‐axis oriented SrBi2Ta2O9 thin film were investigated by x‐ray diffraction methods: θ‐2θ scan, rocking curve, and φ scans. The well aligned microstructure was observed with the average grain size of about 2000 Å in an atomic force microscopic image. Ferroelectric properties were observed for the c‐axis oriented thin film: Pr*−PrΛ and Ec were 9.7 μC/cm2 and 50 kV/cm, respectively, with excitation voltage of 3 V.Keywords
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