Dependence of conduction-band discontinuity on aluminium mole fraction in GaAs/AlGaAs heterojunctions
- 13 February 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (4) , 218-219
- https://doi.org/10.1049/el:19860152
Abstract
The conduction-band discontinuity dependence on aluminium mole fraction for GaAs/AlGaAs heterojunctions is discussed and is shown to have a maximum value at a mole fraction of approximately 0.45.Keywords
This publication has 1 reference indexed in Scilit:
- HETEROSTRUCTURE MATERIALSPublished by Elsevier ,1978