Metalorganic molecular beam epitaxy of γ-Al2O3 insulator films on Si with laser irradiation
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 494-499
- https://doi.org/10.1016/0022-0248(89)90451-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Toyohashi University of Technology
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