Generalized Drude approach to the conductivity relaxation time due to electron-hole collisions in optically excited semiconductors

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Abstract
We apply the generalized Drude approach to obtain the zero-frequency relaxation time from carrier scattering in electron-hole plasmas in semiconductors. To our knowledge this is the first time this approach has been tested on these kinds of scattering processes. It is found to work quite well and lacks the disadvantage of the Boltzmann approach for giving results in only the quantum and classical limits. Furthermore, the calculations are much simpler than those in the Boltzmann approach.