Ambipolar tunneling in near-surface quantum wells

Preprint

1 September 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9709014

Abstract

We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling currents for electrons and holes. The field induces a Stark shift of the photoluminescence signal which compares well with experimental data from near-surface GaAs/AlGaAs single quantum wells.

Keywords

SURFACE QUANTUM WELL
AMBIPOLAR TUNNELING
PHOTOLUMINESCENCE
ELECTRIC FIELD
QUANTUM WELLS
TUNNELING
WELLS

All Related Versions

Version 1, 1997-09-01, ArXiv
Published version: Superlattices and Microstructures, 20 (1), 1.

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