Physical Property of Disordered-GaAs Produced by Ion Implantation

• 1 June 1979
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 18  (6) , 1079-1086
• https://doi.org/10.1143/jjap.18.1079

Abstract

Keywords

• PHYSICAL PROPERTY
• ION IMPLANTATION
• PRODUCED BY ION
• PROPERTY OF DISORDERED
• DISORDERED GAAS PRODUCED