Optical investigation of MQW system InP–InGaAs–InP

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Abstract
A new multiquantum well system, InP–InGaAs–InP, has been grown by the chloride transport vapor phase epitaxy. The Auger measurements show that a very sharp InGaAs–InP heterointerface (less than 30 Å) can be obtained by the present growth system. Optical absorption and photoluminescence measurements give the evidence for the formation of the quantum wells in InGaAs layers. Temperature dependence of photoluminescence indicates that the dominant emission at low temperatures is interpreted as the band‐to‐acceptor transition. It also shows that temperature dependence of the transition energy from hole subband to electron subband is apparently affected by the thickness of the quantum well. Two models are presented for this. One takes into account the localized phonons in the InGaAs–InP heterointerface region whose frequency is higher than that in the bulk samples. The other considers the difference in the thermal expansion coefficients of InGaAs and InP, which reduces a shift of the [000] conduction band minimum of the InGaAs quantum well layer toward higher energy with decreasing temperature.

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