A new half-micrometer p-channel MOSFET with efficient punchthrough stops

1 March 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (3) , 317-321
https://doi.org/10.1109/t-ed.1986.22489

Abstract

This paper describes design and characteristics of a new half-micrometer buried p-channel MOSFET with efficient punch-through stops. The approach for scaling down the buried p-channel MOSFET's is discussed by using two-dimensional process/device simulations and experimental results. The efficient punchthrough stops have realized high punchthrough resistance in half-micrometer dimensions without increasing the n-well concentration and extreme scaling of channel and source-drain junction depths. Moreover, this p-channel MOSFET shows the breakdown voltage to be as high as 10 V. The fabrication sequence is compatible with the conventional n-channel LDD MOSFET's.

Keywords

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