Modeling of kink-shaped carbon-nanotube Schottky diode with gate bias modulation

27 May 2002

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 80 (21) , 4027-4029
https://doi.org/10.1063/1.1481213

Abstract

A model is proposed for the recent gate voltage V G modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode [Z. Yao, H. Postma, L. Balents, and C. Dekker, Nature (London) 402, 273 (1999)]. Since larger V G increases both the forward and the reverse turn-on voltages of the diode, we show that: (1) the rectification must occur at the kink where the metallic and the semiconducting NTs meet, and not at the electrode contact, and (2) the semiconducting NT must be n type. The turn-on voltages are derived analytically as a function of V G considering the electrode contact contribution and a good agreement is obtained with the experimental data.

Keywords

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