A Pseudopotential Approach to the Formation of Group IV Interstitial in III-V Semiconductors
- 1 January 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (1R)
- https://doi.org/10.1143/jjap.28.1
Abstract
Formation of neutral group IV interstitial atoms in III-V semiconductors is investigated using a pseudopotential perturbation approach. The interstitial sites of group IV atoms in III-V semiconductors are specified by the atomic volume ratio \varOmegaIV/\varOmegaIII-V and bulk modulus ratio B IV/B III-V between III-V and IV semiconductors. The favored interstitial site is found to change from hexagonal to tetrahedral with an increase in \varOmegaIV/\varOmegaIII-V and decrease in B IV/B III-V. The calculated formation energies of group IV interstitial in III-V semiconductors imply that interstitial Sn is formed more easily than interstitial Si and Ge.Keywords
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