Monolithically integrated silicon n MOS pin photoreceiver
- 27 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (22) , 1887-1888
- https://doi.org/10.1049/el:19941268
Abstract
A monolithic Si optical receiver is reported that consists of an Si nMOS preamplifier and a novel, lateral Si pin photodiode. The Si photodiode has a bandwidth of 900 MHz and a responsivity of 0.48 A/W at 870 nm. The optical receiver has demonstrated open-eye operation to 370 Mbit/s with 3 µA of signal photocurrent.Keywords
This publication has 1 reference indexed in Scilit:
- Gigahertz transresistance amplifiers in fine line NMOSIEEE Journal of Solid-State Circuits, 1984