A high output mode for submicron M-R memory cells
- 1 September 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 28 (5) , 2356-2358
- https://doi.org/10.1109/20.179490
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Properties of 1.4*2.8 mu m/sup 2/ active area M-R elementsIEEE Transactions on Magnetics, 1991
- Dynamic switching process of sandwich-structured MR elementsIEEE Transactions on Magnetics, 1989