Thin high-dielectric TiO2 films prepared by low pressure MOCVD
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 725-728
- https://doi.org/10.1016/0167-9317(92)90531-u
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Preparation and Properties of Ta2 O 5 Films by LPCVD for ULSI ApplicationJournal of the Electrochemical Society, 1990
- Kinetics of Low‐Pressure Chemical Vapor Deposition of TiO2 from Titanium TetraisopropoxideJournal of the Electrochemical Society, 1990
- Statistical equipment modeling for VLSI manufacturing: an application for LPCVDIEEE Transactions on Semiconductor Manufacturing, 1990