A New Two-Dimensional Silicon Oxidation Model
- 1 May 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 6 (3) , 410-416
- https://doi.org/10.1109/tcad.1987.1270286
Abstract
This paper describes a new two-dimensional silicon oxidation model taking into consideration the deformation of silicon. In the model based on the steady-state oxidant diffusion and viscoelastic deformation of the oxide, it is assumed that the oxide is composed of two layers during the deformation of the oxide. Simulated results on a LOCOS structure were obtained using the boundary element method (BEM). It is proved that the present model can analyze oxidation-induced stress in the silicon substrate, which is not explained by previous models, as well as predict the oxide shape.Keywords
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