DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
- 1 October 1981
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 42 (C4) , C4-635
- https://doi.org/10.1051/jphyscol:19814139
Abstract
A new method (HOMOCVD) of amorphous hydrogenated silicon (a-Si : H) deposition is reported in which SiH4 is thermally decomposed in the vapor state to produce SiH2 as the reactive intermediate. The resulting films contain up to 30 atomic % hydrogen and properties comparable to glow discharge-produced material. Since the reactive intermediate and its chemistry are unambiguously known, HOMOCVD provides insight into the nature of the deposition processKeywords
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