Silicon solar cells on unidirectionally recrystallized metallurgical silicon
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (4) , 442-446
- https://doi.org/10.1109/t-ed.1977.18754
Abstract
The deposition of a silicon layer containing a p-n junction on a metallurgical silicon substrate has been used for the fabrication of solar cells. The substrate was prepared by the unidirectional solidification of purified metallurgical silicon on a graphite plate, and the active region of the solar cell was deposited by the thermal reduction of trichlorosilane with hydrogen containing appropriate dopants. The current-voltage characteristics of a number of solar cells were measured in the dark and under illumination. The AM1 efficiency of large-area cells (30 cm2) was up to 5.5 percent. When a large-area cell was divided into small-area (5-cm2) ones, the conversion efficiency was found to correlate directly with the dark current-voltage characteristics of, and the structural properties of silicon in, each cell.Keywords
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