Hot-electron induced degradation in AlGaAs/GaAs HEMTs
- 1 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 405-408
- https://doi.org/10.1016/0167-9317(92)90463-2
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomaliesIEEE Transactions on Electron Devices, 1988