Improved GaAs power FET Performance using Be Co-implantation
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (3) , 116-117
- https://doi.org/10.1109/edl.1987.26571
Abstract
Be co-implantation following the standard Si donor implantation improves the performance of directly implanted GaAs power FET's. The doping profile abruptness increases from 88 to 48 nm/decade. The device efficiency increases by at least 15 percent and the maximum output power by about 10 percent due to reduction in gate-drain breakdown current.Keywords
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