Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 193-196
- https://doi.org/10.1109/gaas.1995.528992
Abstract
GaAs MESFET baseband amplifiers using novel distributed amplification schemes have been developed. The key feature of their design is a direct coupling architecture employing two new distributed DC transformers. One is a distributed level-shift circuit and the other is a distributed SCFL level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a DC-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier ICs. A distributed baseband amplifier IC with the distributed SCFL level transformer can be directly coupled with a GaAs SCFL circuit. This IC also has a DC-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broadband characteristics.Keywords
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