Scattering of Carriers from Doubly Charged Impurity Sites in Germanium

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Abstract
The effect of doubly charged impurity sites on the mobility of carriers in Ge has been observed in both equilibrium and photo-conductivity measurements. For equilibrium studies Zn-doped samples were used. Zn is a double-acceptor impurity in Ge, introducing levels at about 0.03 ev and 0.09 ev from the valence band. Studies of the magnitude of mobility indicate that the scattering cross section for holes from doubly charged Zn sites is approximately four times that for holes from singly charged Ga sites.