Photoelectrochemical Properties of Iron-Oxide Films and the Coating Effects onto n-Si as an Efficient Photoanode
- 1 July 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (7R)
- https://doi.org/10.1143/jjap.21.1075
Abstract
The photoelectrochemical properties of iron-oxide thin films prepared by various techniques have been investigated extensively, and it was found that the quantum efficiency of the photoresponse is low for visible light. Iron-oxide films have been used in fabricating heterostructure electrodes composed of Si coated with iron-oxide. This iron-oxide/Si heterostructure has been characterized by X-ray diffraction, Auger electron spectroscopy and capacitance measurements, and Auger analysis has shown that the substances of the heterostructure interdiffuse deep across the interface. Some possible energy diagrams for the heterostructure are proposed.Keywords
This publication has 30 references indexed in Scilit:
- Observation of charge-transfer-controlled photocurrent at the Ti-electrolyte interfacePhysical Review B, 1980
- Hydrogen and electricity from water and light: A lanthanum chromite-titanium dioxide anodeSolar Energy Materials, 1979
- A study of oxide-based heterostructure photoelectrodesSolar Energy Materials, 1979
- Improved solar efficiencies for doped polycrystalline TiO2 photoanodesMaterials Research Bulletin, 1979
- Transition-metal dopants for extending the response of titanate photoelectrolysis anodesSolar Energy Materials, 1979
- Towards the design of contrived photosynthesizersSolar Energy Materials, 1979
- Electroluminescence at the n-TiO2/electrolyte interfaceApplied Physics Letters, 1978
- Flatband Potentials and Donor Densities of Polycrystalline α ‐ Fe2 O 3 Determined from Mott‐Schottky PlotsJournal of the Electrochemical Society, 1978
- Photoassisted electrolysis of water using single crystal α-Fe2O3 anodesMaterials Research Bulletin, 1976
- Investigation on the frequency‐dependence of the impedance of the nearly ideally polarizable semiconductor electrodes CdSe, CdS and TiO2Berichte der Bunsengesellschaft für physikalische Chemie, 1975