Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

Preprint

2 November 1998

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9806267

Abstract

We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.

Keywords

NEUTRON TRANSMUTATION DOPED
METAL INSULATOR TRANSITION
ELECTRICAL PROPERTIES
ISOTOPICALLY ENRICHED
TRANSMUTATION DOPED
CARRIER TRANSPORT

All Related Versions

Version 1, 1998-06-23, ArXiv
Version 2, 1998-11-02, ArXiv
Published version: Physical Review B, 58 (15), 9851.

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