LEC Growth of GaSb Single Crystals Using Boric Oxide
- 1 June 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (6) , L318-320
- https://doi.org/10.1143/jjap.19.l318
Abstract
The Liquid Encapsulated Czochralski (LEC) technique using low viscosity B2O3 containing Na2AlF6 as an encapsulant is proposed. A detail of the growth technique is described and GaSb single crystals are prepared. Mass spectroscopic analysis and Hall coefficient measurements are performed for the grown crystal and the results are compared with those for the charged material.Keywords
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