Band-to-band tunneling and thermal generation gate-induced drain leakage

• 1 January 1988
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 35  (12) , 2433
• https://doi.org/10.1109/16.8842

Abstract

Keywords

• LEAKAGE CURRENT
• SILICON DIOXIDE
• CMOS
• MOSFET
• BAND TUNNELING
• DIODE LEAKAGE
• GATE INDUCED