Microprobe RHEED and SREM studies of Si MBE on Ga-adsorbed Si(111) surface
- 1 April 1993
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 48 (4) , 417-424
- https://doi.org/10.1016/0304-3991(93)90117-g
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Molecular beam epitaxial growth of Si on Ga-activated Si(111) surfaceApplied Physics Letters, 1992
- Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer II. Critical step flow of the growth with and without mediateJournal of Crystal Growth, 1992
- Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer I. Reflection electron microscope observation of the growth with and without a Sn layer mediate the step flowJournal of Crystal Growth, 1992
- Surfactant Epitaxy of Si on Si(111) Mediated by SnJapanese Journal of Applied Physics, 1991
- The growth of Ge on a surface: surface catalytic epitaxySurface Science, 1991
- Are bare surfaces detrimental in epitaxial growth?Applied Physics Letters, 1991
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of SbJapanese Journal of Applied Physics, 1990
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in SiJapanese Journal of Applied Physics, 1987
- RHEED studies of Si(100) surface structures induced by Ga evaporationSurface Science, 1981