Time-differential perturbed-angular-correlation study of pure and Sn-dopedIn2O3semiconductors

We present a series of measurements of the static and time-dependent interactions in the angular correlation of ${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$ (electron capture to ${}_{}{}^{111}{}_{}{}^{}\mathrm{Cd}$) in pure and Sn-doped ${\mathrm{In}}_2$ ${\mathrm{O}}_3$. Results on the static electric field gradient are consistent with mainly ionic bonds and confirm the s character of the conduction band. The temperature and free-electron-density dependence of the fluctuating interaction is analyzed, thus allowing a tentative description of electron-capture aftereffects in semiconductors and insulators compounds. The hyperfine parameter characteristic of the time-dependent interaction provides a measurement of the hole lifetime in an impurity level. The position of the Cd impurity level deduced from our results is 0.${16}_4$ eV above the valence band.