Screened Coulombic impurity bound states in semi-infinite multiple-quantum-well systems
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12) , 8264-8268
- https://doi.org/10.1103/physrevb.33.8264
Abstract
The binding energy of an electron to a screened charged impurity in a semi-infinite array of quantum wells is calculated as a function of free-electron concentration, separation of the quantum wells, and the position of the impurity. It is shown that the binding energy is strongly enhanced at the vacuum–multiple-quantum-well interface. The binding energy as a function of three-dimensional free-electron density can show two- or three-dimensional behavior depending upon the way in which the density is varied.Keywords
This publication has 19 references indexed in Scilit:
- Shallow-impurity states in semiconductor quantum-well structuresPhysical Review B, 1985
- Screened Coulombic impurity bound states in semiconductor quantum wellsPhysical Review B, 1984
- Binding energy of the impurity level in the superlatticePhysical Review B, 1983
- Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Influence of charged impurities on Si inversion-layer electronsPhysical Review B, 1982
- Energy spectra of donors inquantum well structures in the effective-mass approximationPhysical Review B, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Hydrogenic impurity states in a quantum well: A simple modelPhysical Review B, 1981
- Screening effects in-type Si inversion layersPhysical Review B, 1979
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967