Noise performance of gallium-arsenide and indium-phosphide injection-limited diodes

11 January 1973

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 9 (1) , 11-12
https://doi.org/10.1049/el:19730008

Abstract

Noise factors of gallium-arsenide and indium-phosphide injection-limited diodes have been calculated. The results show that it is generally preferable to bias the diodes to fields higher than the maximum-negative-mobility region if the appropriate boundary condition at the cathode can be maintained.

Keywords

BOUNDARY CONDITION
SEMICONDUCTOR DIODES
GALLIUM ARSENIDE
DIFFUSION COEFFICIENTS
NOISE

This publication has 2 references indexed in Scilit:

Diffusion of hot electrons in n indium phosphide
Electronics Letters, 1973
Chapter 1 Application Utilizing Bulk Negative Resistance
Published by Elsevier ,1971