Plasma chemical physics in the electronics industry
- 1 December 1981
- journal article
- review article
- Published by Elsevier in Thin Solid Films
- Vol. 86 (2-3) , 147-164
- https://doi.org/10.1016/0040-6090(81)90284-4
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Decomposition and product formation in CF4-O2 plasma etching silicon in the afterglowJournal of Applied Physics, 1981
- New Methods of Processing Silicon SlicesScience, 1980
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- The effect of added hydrogen on the rf discharge chemistry of CF4, CF3H, and C2F6Journal of Applied Physics, 1979
- The plasma oxidation of CF4 in a tubular-alumina fast-flow reactorJournal of Applied Physics, 1979
- The evolution of digital electronics towards VLSIIEEE Transactions on Electron Devices, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979
- Reactive ion etching of siliconJournal of Vacuum Science and Technology, 1979
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949
- The Transistor, A Semi-Conductor TriodePhysical Review B, 1948