Electronic surface states of II–VI compound semiconductors
- 1 July 1982
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 11-12, 268-287
- https://doi.org/10.1016/0378-5963(82)90074-5
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Surface states at unrelaxed ZnO(101̄0)Journal of Vacuum Science and Technology, 1980
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Dynamical analysis of low-energy-electron-diffraction intensities from InSb(110)Physical Review B, 1980
- Calculation of low-energy-electron-diffraction intensities from). II. Influence of calculational procedure, model potential, and second-layer structural distortionsPhysical Review B, 1978
- Electronic surface and bulk transitions on clean ZnO surfaces studied by electron energy-loss spectroscopyPhysical Review B, 1977
- Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculations: GaAs(110) and ZnSe(110)Journal of Vacuum Science and Technology, 1977
- LEED intensity analysis and electron spectroscopy of ZnSe(110)Journal of Vacuum Science and Technology, 1977
- Electronic structure of nonpolar surfaces of II–VI compoundsJournal of Vacuum Science and Technology, 1976
- Contact potential differences for III–V compound surfacesJournal of Vacuum Science and Technology, 1976
- Electronic Core Levels of theCompoundsPhysical Review B, 1971