Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 4 (6) , G50-G52
- https://doi.org/10.1149/1.1370417
Abstract
Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous modulation of the diameters of pores on large areas of the samples which indicates a correlation between the phases of the oscillations in the pores. These self-induced diameter oscillations may be useful for three-dimensional microstructuring of n-InP and thus for the design and fabrication of new photonic materials. © 2001 The Electrochemical Society. All rights reserved.Keywords
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