Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si: H
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (S2)
- https://doi.org/10.7567/jjaps.21s2.259
Abstract
Schottky barrier diodes were fabricated using P-doped a-Si: H films for different doping ratio (PH3/SiH4), and their I-V and C-V characteristics have been presented systematically. The effective density of gap states (N I) deduced from a 1/C 2-V curve increases with an increase in a doping level of P atoms. N I is strongly correlated with ICTS and PAS data which are more directly associated with a density of gap states.Keywords
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